KINGSTON Memoria Ram 4GB DDR3 1333Mhz non-Ecc CL9

Modulo DDR3-1333 CL9 SDRAM (Synchronous DRAM), 1Rx8 basato su 512M x 8-bit DDR3-1333 FBGA.

Caratteristiche Tecniche:

JEDEC standard 1.5V (1.425V ~1.575V) Power Supply

VDDQ = 1.5V (1.425V ~ 1.575V)

667MHz fCK for 1333Mb/sec/pin

8 independent internal bank

Programmable CAS Latency: 9, 8, 7, 6

Programmable Additive Latency: 0, CL - 2, or CL - 1 clock

Programmable CAS Write Latency(CWL) = 7 (DDR3-1333)

8-bit pre-fetch

Burst Length: 8 (Interleave without any limit, sequential with

starting address 000 only), 4 with tCCD = 4 which does not

allow seamless read or write [either on the fly using A12 or

MRS]

Bi-directional Differential Data Strobe

Internal(self) calibration: Internal self calibration through ZQ

pin (RZQ : 240 ohm ± 1%)

On Die Termination using ODT pin

Average Refresh Period 7.8us at lower than TCASE 85°C,

3.9us at 85°C < TCASE < 95°C

Asynchronous Reset

PCB: Height 0.740 (18.75mm), single sided component

CL(IDD) 9 cycles

Row Cycle Time (tRCmin) 49.5ns (min.)

Refresh to Active/Refresh 260ns (min.)

Command Time (tRFCmin)

Row Active Time (tRASmin) 36ns (min.)

Maximum Operating Power 2.100 W*

UL Rating 94 V - 0

Operating Temperature 0o

C to 85o

C

Storage Temperature -55o

C to +100o

C